IRFSL7762

75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

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IRFSL7762
IRFSL7762

Product details

  • ID (@ TC=25°C) max
    85 A
  • ID max
    60 A
  • ID (@ TC=100°C) max
    60 A
  • Mounting
    THT
  • Package
    I2PAK (TO-262)
  • Polarity
    N
  • Ptot max
    140 W
  • Qgd
    26 nC
  • QG
    85 nC
  • RDS (on) (@10V) max
    6.7 mΩ
  • RDS (on) max
    6.7 mΩ
  • RthJC max
    1.05 K/W
  • Tj max
    175 °C
  • VDS max
    75 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free, RoHS Compliant
  • StrongIRFET™

Applications

Documents

Design resources

Developer community

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