Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued

IRFNG50

END OF LIFE
Data Sheet
package

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IRFNG50
IRFNG50
Data Sheet

Product details

  • Configuration
    Discrete
  • ID (@100°C) max
    3.5 A
  • ID (@25°C) max
    5.5 A
  • Package
    SMD-1
  • Polarity
    N
  • RDS (on) (@25°C) max
    2000 mΩ
  • VBRDSS min
    1000 V
OPN
IRFNG50EPSA1
Product Status discontinued
Infineon Package
C-CCN-3
Package Name SMD-1 standard
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status discontinued
Infineon Package
C-CCN-3
Package Name SMD-1 standard
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
IRFNG50 is a high reliability, 1000V, single, N-channel MOSFET in a SMD-1 package. It utilizes HEXFET MOSFET technology to achieve low on-state resistance, high transconductance, and superior reverse energy and diode recovery dv/dt capability. Ideal for power supplies, motor controls, choppers, audio amplifiers, and other high-energy pulse circuit applications.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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