IRFHM7194

100V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 x 3.3 package

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IRFHM7194
IRFHM7194

Product details

  • ID (@ TC=100°C) max
    25 A
  • ID max
    25 A
  • ID (@ TC=25°C) max
    34 A
  • ID (@ TA=25°C) max
    9.3 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    S3O8 (3x3mm style SuperSO8)
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    2.8 W
  • Ptot max
    37 W
  • Qgd
    4.3 nC
  • QG
    13 nC
  • RDS (on) (@10V) max
    16.4 mΩ
  • RDS (on) max
    16.4 mΩ
  • RthJC max
    3.4 K/W
  • Tj max
    150 °C
  • VDS max
    100 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Low RDSon (less than 16.4mOhms) results in Lower Conduction Losses
  • Low Charge (typical 13nC) results in Low Switching Losses
  • Low Thermal Resistance to PCB (less than 3.4°C/W) Enable better thermal dissipation
  • Low Profile (less than 0.9 mm) results in Increased Power Density
  • Industry-Standard Pinout results in Multi-Vendor Compatibility
  • Compatible with Existing Surface Mount Techniques
  • Environmentally Friendlier RoHS Compliant, Halogen-Free
  • Increased Reliability MSL1, Industrial Qualification

Applications

Documents

Design resources

Developer community

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