IRFH7911

IRFH7911

30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRFH7911
IRFH7911


Product details

  • ID (@ TA=70°C) max
    23 A, 23 A
  • ID (@ TA=25°C) max
    28 A, 28 A
  • Moisture Sensitivity Level
    1
  • Package
    PowerStage 5x6 (TISON-8)
  • Polarity
    N+N, N+N
  • Ptot max
    3.4 W
  • Ptot (@ TA=25°C) max
    3.4 W
  • Qgd (typ)
    11 nC, 11 nC
  • QG
    34 nC
  • RDS (on) (@10V) max
    3 mΩ, 3 mΩ
  • RDS (on) (@4.5V) max
    4 mΩ, 4 mΩ
  • RDS (on) max
    3 mΩ, 3 mΩ
  • RthJA max
    37 K/W
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS max
    20 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant

Benefits

  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.9 mm)
  • Dual N-Channel MOSFET
  • Control and Synchronous MOSFETs in one package
  • Low Charge Control MOSFET
  • Low Rdson Synchronous MOSFET
  • Intrinsic Schottky diode with Low Forward Voltage on Q2

Applications

Documents

Design resources

Developer community