IRFH7187

100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package.
Data Sheet

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IRFH7187
IRFH7187
Data Sheet

Product details

  • ID (@ TC=25°C) max
    105 A
  • ID max
    66 A
  • ID (@ TC=100°C) max
    66 A
  • ID (@ TA=25°C) max
    18 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    PQFN 5 x 6 B
  • Polarity
    N
  • Ptot max
    132 W
  • Ptot (@ TA=25°C) max
    3.8 W
  • Qgd
    11 nC
  • QG
    33 nC
  • RDS (on) max
    6 mΩ
  • RDS (on) (@10V) max
    6 mΩ
  • RthJC max
    0.95 K/W
  • Tj max
    150 °C
  • VDS max
    100 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Low RDS(ON) (less than 0.6mOhms) provides Lower Conduction Losses
  • Internal Snubber for Reduced Vds Spike and Improved EMI
  • Low Thermal Resistance to PCB (less than 0.95°C/W) for Increased Power Density
  • 100% Rg Tested for Increased Reliability
  • Low Profile (less than 1.05 mm) results in Increased Power Density
  • Industry-Standard Pinout provides for Multi-Vendor Compatibility
  • Compatible with Existing Surface Mount Techniques for Easier Manufacturing
  • Environmentally Friendly - RoHS Compliant and Halogen-Free
  • Increased Reliability - MSL1

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