IRFH5306

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Data Sheet

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IRFH5306
IRFH5306
Data Sheet

Product details

  • ID (@ TA=25°C) max
    15 A
  • ID (@ TC=25°C) max
    45 A
  • ID max
    28 A
  • ID (@ TC=100°C) max
    28 A
  • ID (@ TA=70°C) max
    13 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    PQFN 5 x 6 B
  • Polarity
    N
  • Ptot max
    26 W
  • Ptot (@ TA=25°C) max
    3.6 W
  • Qgd
    3 nC
  • QG
    7.8 nC
  • RDS (on) (@4.5V) max
    13.3 mΩ
  • RDS (on) max
    8.1 mΩ
  • RDS (on) (@10V) max
    8.1 mΩ
  • RthJC max
    4.9 K/W
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Industry-leading quality
  • Low RDSon (less than 1.15 mO)
  • Low Thermal Resistance to PCB (less than 0.8°C/W)
  • 100% Rg tested
  • Low Profile (less than 0.9 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified Industrial
  • Qualified MSL1

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Documents

Documents

Design resources

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