Active
RoHS Compliant

IRFB4137

300V Single N-Channel IR MOSFET™ Power MOSFET in a TO-220 package
Data Sheet
package

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IRFB4137
IRFB4137
Data Sheet

Product details

  • Budgetary Price €/1k
    1.46
  • ID (@25°C) max
    38 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    341 W
  • Qgd
    26 nC
  • QG (typ @10V)
    83 nC
  • RDS (on) (@10V) max
    69 mΩ
  • RthJC max
    0.44 K/W
  • Tj max
    175 °C
  • VDS max
    300 V
  • VGS(th)
    4 V
  • VGS max
    20 V
Recommended
OPN
IRFB4137PBFAKSA1 IRFB4137PBF
Product Status active discontinued
Infineon Package
TO220
TO220
Package Name TO220 TO220
Packing Size 1000 1000
Packing Type TUBE TUBE
Moisture Level NA NA
Moisture Packing NON DRY NON DRY
Lead-free No Yes
Halogen Free Yes Yes
RoHS Compliant Yes Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
TO220
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant

Product Status discontinued
Infineon Package
TO220
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The IR MOSFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

Features

  • Industry standard through-hole power package
  • High-current rating
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

Benefits

  • Standard pinout allows for drop in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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