IRFB4115G

150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package

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IRFB4115G
IRFB4115G

Product details

  • ID (@ TC=25°C) max
    104 A
  • ID max
    74 A
  • ID (@ TC=100°C) max
    74 A
  • Mounting
    THT
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    380 W
  • Qgd
    26 nC
  • QG
    77 nC
  • RDS (on) (@10V) max
    11 mΩ
  • RDS (on) max
    11 mΩ
  • RthJC max
    0.4 K/W
  • Tj max
    175 °C
  • VDS max
    150 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant

Applications

Documents

Design resources

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