obsolete
RoHS Compliant
Lead-free

IRF9953

-30V Dual P-Channel Power MOSFET in a SO-8 package
Data Sheet
package

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IRF9953
IRF9953
Data Sheet

Product details

  • ID (@25°C) max
    -2.3 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    P+P
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    1.1 nC
  • QG (typ @10V)
    6.1 nC
  • RDS (on) (@10V) max
    250 mΩ
  • RDS (on) (@4.5V) max
    400 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    -30 V
  • VGS(th) min
    -1 V
  • VGS max
    20 V
OPN
IRF9953TRPBF
Product Status obsolete
Infineon Package
SO8
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status obsolete
Infineon Package
SO8
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100KHz
  • Industry standard surface-mount power package

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop-in replacement

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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