IRF7902

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 Package
Data Sheet

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IRF7902
IRF7902
Data Sheet

Product details

  • ID (@25°C) max
    9.7 A, 6.4 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Ptot max
    2 W
  • Qgd (typ)
    2.3 nC, 2.3 nC
  • QG (typ @4.5V)
    4.6 nC, 6.5 nC
  • RDS (on) (@10V) max
    14.4 mΩ, 22.6 mΩ
  • RDS (on) (@4.5V) max
    18.7 mΩ, 29.7 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS(th)
    1.8 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Low Thermal resistance to PCB
  • Compatible with Existing Surface Mount Techniques
  • Low RDS(ON) at 4.5V VGS
  • Very Low Gate Charge
  • Dual N-Channel MOSFET

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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