IRF7341G
not for new design
RoHS Compliant
Lead-free

IRF7341G

55V Dual N-Channel Power MOSFET in a SO-8 package
Datasheet
package
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IRF7341G
IRF7341G
View product family
Datasheet


Product details

  • ID (@25°C) max
    5.1 A
  • Moisture Sensitivity Level
    1
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    SO-8
  • Polarity
    N+N
  • Ptot (@ TA=25°C) max
    2.4 W
  • Qgd (typ)
    7.3 nC
  • QG (typ @10V)
    29 nC
  • RDS (on) (@10V) max
    50 mΩ
  • RDS (on) (@4.5V) max
    65 mΩ
  • RthJA max
    62.5 K/W
  • Special Features
    Logic Level
  • Tj max
    175 °C
  • VDS max
    55 V
  • VGS(th) min
    1 V
  • VGS max
    20 V

OPN
IRF7341GTRPBF
Product Status not for new design
Infineon Package
SO8
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
CN,US
View product family

Product Status not for new design
Infineon Package
SO8
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
CN,US
View product family
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard surface-mount power

Benefits

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification level
  • High performance, low-frequency
  • Standard pinout, drop-in replacement
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