Active
RoHS Compliant
Lead-free

IRF7341G

55V Dual N-Channel Power MOSFET in a SO-8 package
Data Sheet
package
ea.
in stock

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IRF7341G
IRF7341G
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.64
  • ID (@25°C) max
    5.1 A
  • Moisture Sensitivity Level
    1
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SO-8
  • Polarity
    N+N
  • Ptot (@ TA=25°C) max
    2.4 W
  • Qgd (typ)
    7.3 nC
  • QG (typ @10V)
    29 nC
  • RDS (on) (@10V) max
    50 mΩ
  • RDS (on) (@4.5V) max
    65 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    175 °C
  • VDS max
    55 V
  • VGS(th) min
    1 V
  • VGS max
    20 V
Recommended
OPN
IRF7341GTRPBF
Product Status active
Infineon Package
SO8
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
SO8
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard surface-mount power

Benefits

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification level
  • High performance, low-frequency
  • Standard pinout, drop-in replacement

Documents

Documents

Design resources

Partner solutions

Developer community

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