IRF7171M

100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package
Data Sheet

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IRF7171M
IRF7171M
Data Sheet

Product details

  • ID (@ TC=25°C) max
    93 A
  • ID (@ TC=100°C) max
    59 A
  • ID max
    59 A
  • Micro-stencil
    IRF66MN-25
  • Mounting
    SMD
  • Package
    DirectFET MN
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    2.1 W
  • Ptot max
    104 W
  • Qgd
    13 nC
  • QG
    36 nC
  • RDS (on) (@10V) max
    6.5 mΩ
  • RDS (on) max
    6.5 mΩ
  • RthJC max
    1.2 K/W
  • Tj max
    150 °C
  • VDS max
    100 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Ideal for High Performance Isolated Converter Primary Switch
  • Optimized for Synchronous Rectification
  • RoHS Compliant, Halogen Free
  • Lead-Free (Qualified up to 260°C Reflow)
  • Low Conduction Losses
  • High Cdv/dt Immunity
  • Low Profile (less than 0.7mm)
  • Dual Sided Cooling Compatible
  • Compatible with existing Surface Mount Techniques
  • Industrial Qualified
  • FastIRFET™

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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