IRF6718L2

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance
Data Sheet

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IRF6718L2
IRF6718L2
Data Sheet

Product details

  • ID (@25°C) max
    270 A
  • IDpuls max
    490 A
  • Micro-stencil
    IRF66L6-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    DirectFET L6
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    4.3 W
  • Ptot max
    83 W
  • Qgd
    20 nC
  • QG (typ @4.5V)
    64 nC
  • RDS (on) (@10V) max
    0.7 mΩ
  • RDS (on) (@4.5V) max
    1.4 mΩ
  • RthJC max
    1.8 K/W
  • Tj max
    175 °C
  • VDS max
    25 V
  • VGS(th)
    1.9 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
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