IRF6715M

25V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MX package
Data Sheet

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IRF6715M
IRF6715M
Data Sheet

Product details

  • Budgetary Price €/1k
    1.07
  • ID (@25°C) max
    180 A
  • Micro-stencil
    IRF66MX-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    DirectFET (M)
  • Polarity
    N
  • Ptot max
    78 W
  • Ptot (@ TA=25°C) max
    2.8 W
  • Qgd
    12 nC
  • QG (typ @4.5V)
    40 nC
  • RDS (on) (@10V) max
    1.6 mΩ
  • RDS (on) (@4.5V) max
    2.7 mΩ
  • RthJC max
    1.6 K/W
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS(th)
    1.9 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Features

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • High-current rating
  • Dual-side cooling capability
  • Low package height of 0.7mm
  • Low parasitic (1-2 nH) inductance package
  • 100% lead-free (No RoHS exemption)

Benefits

  • Wide availability from distribution partners
  • Industry standard qualification level
  • High current carrying capability
  • Optimum thermal performance
  • Compact form factor
  • High efficiency
  • Environmentally friendly

Applications

Documents

Documents

Design resources

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