Active and preferred

IRF3CMS17N80

Data Sheet
package

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IRF3CMS17N80
IRF3CMS17N80
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ID (@100°C) max
    10 A
  • ID (@25°C) max
    15 A
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • RDS (on) (@25°C) max
    340 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS min
    800 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRF3CMS17N80 is a high reliability, 800V, single, N-channel MOSFET in a TO-254AA low ohmic package. It utilizes HEXFET MOSFET technology to achieve low on-state resistance, high transconductance, and superior reverse energy and diode recovery dv/dt capability. Ideal for power supplies, motor controls, choppers, audio amplifiers, and other high-energy pulse circuit applications.

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