not for new design
RoHS Compliant

IRF1010NS

IR MOSFET 55 V in a D²PAK package
package
ea.
in stock

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IRF1010NS
IRF1010NS
ea.

Product details

  • Budgetary Price €/1k
    0.46
  • ID (@25°C) max
    85 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (TO-263)
  • Polarity
    N
  • Ptot max
    3.8 W
  • Qgd
    27.3 nC
  • QG (typ @10V)
    80 nC
  • RDS (on) (@10V) max
    11 mΩ
  • RthJC max
    0.85 K/W
  • Tj max
    175 °C
  • VDS max
    55 V
  • VGS(th)
    3 V
  • VGS max
    20 V
OPN
IRF1010NSTRLPBF
Product Status not for new design
Infineon Package
D2PAK
Package Name D2PAK
Packing Size 800
Packing Type TAPE & REEL LEFT
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
D2PAK
Package Name D2PAK
Packing Size 800
Packing Type TAPE & REEL LEFT
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS , lighting , load switches as well as battery powered applications.

Benefits

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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