Active and preferred
RoHS Compliant

IQE050N08NM5

OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance
Data Sheet
package
board
ea.
in stock

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IQE050N08NM5
IQE050N08NM5
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.94
  • ID (@25°C) max
    101 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    34.6 nC
  • RDS (on) (@10V) max
    5 mΩ
  • VDS max
    80 V
  • VGS(th)
    3 V
Recommended
OPN
IQE050N08NM5ATMA1
Product Status active and preferred
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The OptiMOS™ 5 80 V PQFN 3.3x3.3 Source-Down features 80 V and low RDS(on) of 5.0 mOhm, offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.

Features

  • Major reduction in RDS(on)30%
  • RthJCover current PQFN
  • Standard & Center Gate available
  • New optimized layout possibilites

Benefits

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses
  • Reduced parasitics

Documents

Documents

Design resources

Partner solutions

Developer community

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