Active and preferred
RoHS Compliant

IQE030N06NM5

Source-Down Products with industry leading RDS(on) and superior thermal performance
Data Sheet
package

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IQE030N06NM5
IQE030N06NM5
Data Sheet

Product details

  • Budgetary Price €/1k
    0.92
  • ID (@25°C) max
    137 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    39 nC
  • RDS (on) (@10V) max
    3 mΩ
  • VDS max
    60 V
  • VGS(th)
    2.8 V
Recommended
OPN
IQE030N06NM5ATMA1
Product Status active and preferred
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The OptiMOS™5 60 V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm, offering a flipped silicon die, which is positioned upside down inside of the component. This allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.

Features

  • Major reduction in RDS(on)30%
  • RthJCover current PQFN
  • Standard & Center Gate available
  • New, optimized layout possibilities

Benefits

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses
  • Reduced parasitics

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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