NEW
Active and preferred
RoHS Compliant

IQE020N04LM6CG

NEW
OptiMOS™ 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
Data Sheet
package

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IQE020N04LM6CG
IQE020N04LM6CG
Data Sheet

Product details

  • ID (@25°C) max
    166 A
  • IDpuls max
    664 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • Ptot max
    107 W
  • QG (typ @10V)
    25 nC
  • QG (typ @4.5V)
    12.1 nC
  • RDS (on) (@10V) max
    2.05 mΩ
  • RDS (on) (@4.5V) max
    3 mΩ
  • RthJC max
    1.4 K/W
  • Special Features
    Logic Level
  • VDS max
    40 V
  • VGS(th)
    1.6 V
Recommended
OPN
IQE020N04LM6CGATMA1
Product Status active and preferred
Infineon Package
PG-TTFN-9
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TTFN-9
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
IQE012N03LM5CG, OptiMOS™ 6 40 V power MOSFET, 1.20 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Center-Gate offers a flipped chip design connecting the source potential directly to the PCB over the thermal pad, giving several advantages, such as increased thermal capability, advanced power density and improved layout possibilities in a Center-Gate footprint for easy design-in on space-constrained PCB areas.

Features

  • Extended gate voltage rating
  • 175°C temperature rating
  • Best price performance

Benefits

  • Gate voltage overdrive
  • Fast charge & discharge of Cg
  • Increased reliability
  • High power density
  • Competitive price

Documents

Documents

Design resources

Partner solutions

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