NEW
Active and preferred
RoHS Compliant

IQE012N03LM5CG

NEW
OptiMOS™ 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
Data Sheet
package

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IQE012N03LM5CG
IQE012N03LM5CG
Data Sheet

Product details

  • ID (@25°C) max
    224 A
  • IDpuls max
    896 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • Ptot max
    107 W
  • QG (typ @10V)
    40 nC
  • QG (typ @4.5V)
    18.9 nC
  • RDS (on) (@10V) max
    1.15 mΩ
  • RDS (on) (@4.5V) max
    1.55 mΩ
  • RthJC max
    1.4 K/W
  • VDS max
    30 V
  • VGS(th) range
    1.2 V to 2 V
  • VGS(th)
    1.6 V
Recommended
OPN
IQE012N03LM5CGATMA1
Product Status active and preferred
Infineon Package
PG-TTFN-9
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TTFN-9
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
IQE012N03LM5CG, OptiMOS™ 5 30 V power MOSFET, 1.20 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Center-Gate offers a flipped chip design connecting the source potential directly to the PCB over the thermal pad, giving several advantages, such as increased thermal capability, advanced power density and improved layout possibilities in a Center-Gate footprint for easy design-in on space-constrained PCB areas.

Features

  • Extended gate voltage rating
  • 175°C temperature rating
  • Best price performance

Benefits

  • Gate voltage overdrive
  • Fast charge & discharge of Cg
  • Increased reliability
  • High power density
  • Competitive price

Documents

Documents

Design resources

Partner solutions

Developer community

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