Active and preferred
RoHS Compliant

IQE004NE1LM7

OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down
Data Sheet
package
ea.
in stock

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IQE004NE1LM7
IQE004NE1LM7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.82
  • ID (@25°C) max
    379 A
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @4.5V)
    29 nC
  • RDS (on) (@4.5V) max
    0.57 mΩ
  • Special Features
    Switching optimized
  • VDS max
    15 V
  • VGS(th)
    1.6 V
Recommended
OPN
IQE004NE1LM7ATMA1
Product Status active and preferred
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications.

Features

  • New 15 V trench power MOSFET technology
  • RDS(on) of 0.45 mOhm
  • Outstanding FOMQOSS/FOMQg
  • Ultra-low package parasitics
  • Standard-Gate

Benefits

  • Top fit in high-ratio DC-DC conversion
  • Reduced conduction losses
  • High efficiency
  • Best switching performance
  • Standard-Gate for easy layout fit-in

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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