Active and preferred
RoHS Compliant

IQD016N08NM5CGSC

OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)
Data Sheet
package
ea.
in stock

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IQD016N08NM5CGSC
IQD016N08NM5CGSC
ea.
Data Sheet

Product details

  • ID (@25°C) max
    323 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 5x6 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    106 nC
  • RDS (on) (@10V) max
    1.57 mΩ
  • VDS max
    80 V
  • VGS(th)
    3 V
Recommended
OPN
IQD016N08NM5CGSCATMA1
Product Status active and preferred
Infineon Package
PG-WHTFN-9
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WHTFN-9
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The power MOSFET IQD016N08NM5CGSC comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.

Features

  • Cutting edge 80 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Center-Gate footprint
  • Industry-standard package

Benefits

  • Best switching performance
  • Minimized conduction losses
  • Fast switching
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Easy thermal management

Documents

Documents

Design resources

Partner solutions

Developer community

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