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IPW65R029CFD7

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies
Data Sheet
package
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IPW65R029CFD7
IPW65R029CFD7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    5.62
  • ID max
    69 A
  • ID (@25°C) max
    69 A
  • IDpuls max
    304 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    TO247
  • Polarity
    N
  • Ptot max
    305 W
  • QG
    145 nC
  • QG (typ @10V)
    145 nC
  • RDS (on) (@ Tj = 25°C)
    25 mΩ
  • Special Features
    Fast recovery diode
  • VDS max
    650 V
  • VGS(th)
    4 V
Recommended
OPN
IPW65R029CFD7XKSA1
Product Status active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R029CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition.  As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies

Documents

Documents

Design resources

Partner solutions

Developer community

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