IPW60R120C7
not for new design
RoHS Compliant
Lead-free

IPW60R120C7

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies
Datasheet
package
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IPW60R120C7
IPW60R120C7
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Datasheet


Product details

  • Budgetary Price €/1k
    1.95
  • ID (@25°C) max
    19 A
  • ID max
    19 A
  • IDpuls max
    66 A
  • Mounting
    THT
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    TO247
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    92 W
  • QG
    34 nC
  • QG (typ @10V)
    34 nC
  • RDS (on) (@10V) max
    120 mΩ
  • RDS (on) (@ Tj = 25°C) max
    120 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.35 K/W
  • Rth
    1.35 K/W
  • Special Features
    Highest performance
  • VDS max
    600 V
  • VGS(th) range
    3 V to 4 V
  • VGS(th)
    3.5 V

OPN
IPW60R120C7XKSA1
Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
AT,DE
View replacement

Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
AT,DE
View replacement
Infineon’s 600 V and 650 V CoolMOS™ C7 superjunction (SJ) MOSFET families are designed to achieve record-level efficiency performance, with reduced losses over the whole load range in hard-switching applications.

Features

  • Reduced switching losses
  • Excellent figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the market
  • Rugged body diode

Benefits

  • high efficiency @ hard switching
  • higher power density
  • reduced cooling
  • MOSFET suits hard & resonant topologies

Applications

EV charging
Documents

Design resources

Partner solutions

Developer community