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Lead-free

IPW60R024CFD7

600V CoolMOS™ CFD7 Superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies
Data Sheet
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IPW60R024CFD7
IPW60R024CFD7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    6.37
  • ID max
    77 A
  • ID (@25°C) max
    77 A
  • IDpuls max
    360 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    TO247
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    320 W
  • QG
    183 nC
  • QG (typ @10V)
    183 nC
  • RDS (on) (@ Tj = 25°C)
    19 mΩ
  • Special Features
    Fast recovery diode
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPW60R024CFD7XKSA1
Product Status active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon’s CoolMOS™ CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server , telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies

Documents

Documents

Design resources

Partner solutions

Developer community

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