IPTG018N08NM5

IPTG018N08NM5

OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance

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IPTG018N08NM5
IPTG018N08NM5


Product details

  • Budgetary Price €/1k
    2.07
  • ID (@25°C) max
    253 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    TOLG (HSOG-8)
  • Polarity
    N
  • QG (typ @10V)
    101 nC
  • RDS (on) (@10V) max
    1.8 mΩ
  • VDS max
    80 V
  • VGS(th) range
    2.2 V to 3.8 V
  • VGS(th)
    3 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The OptiMOS™ 5 power MOSFET 150 V IPTG018N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction.

Features

  • Best in class technology
  • High current rating >300 A
  • Low ringing and voltage overshoot
  • 60% board space reduction
  • Gullwing leads

Benefits

  • High performance capability
  • High system reliability
  • High efficiency and lower EMI
  • Optimized board utilization
  • High thermal cycling on board handling

Applications

Documents

Design resources

Developer community