Active and preferred
RoHS Compliant

IPT026N12NM6

OptiMOS™ 6 power MOSFET normal level 120 V in TOLL package
Data Sheet
package
ea.
in stock

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IPT026N12NM6
IPT026N12NM6
ea.
Data Sheet

Product details

  • ID (@25°C) max
    224 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TOLL (HSOF-8)
  • Polarity
    N
  • QG (typ @10V)
    70 nC
  • RDS (on) (@10V) max
    2.6 mΩ
  • VDS max
    120 V
  • VGS(th)
    3.1 V
Recommended
OPN
IPT026N12NM6ATMA1
Product Status active and preferred
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
This is a normal level 120 V MOSFET in TO-Leadless packaging with 2.6 mOhm on-resistance. Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on), up to 66% better FOMg, up to 90% better Qrr and up to 35% better FOMoss. IPT026N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Features

  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant & halogen-free

Benefits

  • High efficiency
  • Increased power density
  • Robust, reliable performance
  • Increased operating margin
  • Environmentally friendly

Documents

Documents

Design resources

Partner solutions

Developer community

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