Active and preferred
RoHS Compliant
Lead-free

IPQC65R017CFD7

650 V CoolMOS™ N-channel SJ power MOSFET CFD7 in HDSOP-22 bottom-side cooling
ea.
in stock

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IPQC65R017CFD7
IPQC65R017CFD7
ea.

Product details

  • ID max
    136 A
  • ID (@25°C) max
    136 A
  • IDpuls max
    524 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Q-DPAK bottom-side cooled
  • Polarity
    N
  • Ptot max
    694 W
  • QG (typ @10V)
    236 nC
  • QG
    236 nC
  • RDS (on) (@ Tj = 25°C) max
    17 mΩ
  • RDS (on) (@10V) max
    17 mΩ
  • VDS max
    650 V
  • VGS(th)
    4 V
OPN
IPQC65R017CFD7XTMA1
Product Status active and preferred
Infineon Package
Package Name Q-DPAK bottom-side cooled
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name Q-DPAK bottom-side cooled
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 650 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.

Features

  • Ultra-fast body diode
  • 650 V break down voltage
  • Best-in-class RDS(on)
  • Reduced switching losses

Benefits

  • Excellent hard commutation ruggedness
  • Safety margin for high voltage designs
  • Increased power density solutions
  • Outstanding light load efficiency
  • Improved full load efficiency

Applications

Documents

Design resources

Developer community

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