not for new design
RoHS Compliant
Lead-free

IPP60R105CFD7

Infineon’s answer to resonant high power topologies
Data Sheet
package

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IPP60R105CFD7
IPP60R105CFD7
Data Sheet

Product details

  • Budgetary Price €/1k
    1.63
  • ID max
    21 A
  • ID (@25°C) max
    21 A
  • IDpuls max
    79 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    TO220
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    106 W
  • QG (typ @10V)
    42 nC
  • QG
    42 nC
  • RDS (on) (@10V) max
    105 mΩ
  • RDS (on) max
    105 mΩ
  • Special Features
    fast recovery diode
  • VDS max
    600 V
  • VGS(th)
    4 V
OPN
IPP60R105CFD7XKSA1
Product Status not for new design
Infineon Package
PG-TO220-3
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status not for new design
Infineon Package
PG-TO220-3
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Documents

Documents

Design resources

Partner solutions

Developer community

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