NEW
Active and preferred
RoHS Compliant
Lead-free

IPLT60R099CM8

NEW
600 V CoolMOS™ 8 Power Transistor
Data Sheet
package

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IPLT60R099CM8
IPLT60R099CM8
Data Sheet

Product details

  • ID (@25°C) max
    30 A
  • IDpuls max
    87 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    TOLT
  • Polarity
    N
  • QG
    31 nC
  • QG (typ @10V)
    31 nC
  • RDS (on) (@10V) max
    99 mΩ
  • RDS (on) (@ Tj = 25°C)
    83 mΩ
  • VDS max
    600 V
  • VGS(th)
    4.2 V
Recommended
OPN
IPLT60R099CM8XTMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-16
Package Name TOLT
Packing Size 1800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HDSOP-16
Package Name TOLT
Packing Size 1800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Built on Infineon’s world‑class super‑junction MOSFET platform with an integrated fast body diode, making it suitable for a wide range of applications. The 600 V CoolMOS™ 8 enables the highest power density and superior reliability at the lowest possible system cost. It is enhancing Infineon’s WBG offering and the successor of the 600 V CoolMOS™ 7 MOSFET family.

Features

  • Significant reduction of losses
  • Excellent commutation ruggedness
  • Integrated fast body diode
  • ESD protection
  • .XT interconnection technology 
  • For hard and soft switching applications

Benefits

  • Increased power density
  • Ease of use and shorter design in cycle
  • Best price-performance
  • Reduces the size of system
  • Enable multiple topologies
  • Improved thermal performance

Documents

Documents

Design resources

Partner solutions

Developer community

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