IPL70R2K1CES

Data Sheet

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IPL70R2K1CES
IPL70R2K1CES
Data Sheet

Product details

  • Ciss
    163 pF
  • Coss
    14 pF
  • ID (@25°C) max
    2.3 A
  • ID max
    2.3 A
  • IDpuls max
    6.3 A
  • Mounting
    SMT
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    ThinPAK 5x6
  • Pin Count
    5 Pins
  • Polarity
    N
  • Ptot max
    22 W
  • Qgd
    4.3 nC
  • QG
    7.8 nC
  • QG (typ @10V)
    7.8 nC
  • RDS (on) max
    2100 mΩ
  • RDS (on) (@10V) max
    2100 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    5.6 K/W
  • Rth
    5.6 K/W
  • Special Features
    price/performance
  • VDS max
    700 V
  • VGS(th)
    2.5 V to 3.5 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price/performance optimized platform enabling to target applications in charger and adapter markets by still meeting the highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Features

  • Extremely low losses due to very low FOM R DS(on)*Q G and E oss
  • Very high commutation ruggedness
  • Easy to use/drive
  • Pb-free plating, Halogen free mold compound

Benefits

  • Low conduction losses from large margin between R DS(on) typical to nominal 
  • Low switching losses from optimized output capacitance (E oss) 
  • Optimized EMI to balance switching speed and EMI behavior 
  • Good controllability given the integrated R G

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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