IPI80N06S2-08

55 V, N-Ch, 8 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™
Data Sheet

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IPI80N06S2-08
IPI80N06S2-08
Data Sheet

Product details

  • Budgetary Price €/1k
    1.29
  • ID (@25°C) max
    80 A
  • IDpuls max
    320 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    I2PAK (PG-TO262-3)
  • Polarity
    N
  • Ptot max
    215 W
  • QG (typ @10V) max
    72 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    8 mΩ
  • RthJC max
    0.7 K/W
  • Technology
    OptiMOS™
  • VDS max
    55 V
  • VGS(th) max
    4 V
  • VGS(th) min
    2.1 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Package (RoHS compliant)
  • Ultra low RDS(on)
  • 100% Avalanche tested
  • PPAP Capable Device

Benefits

  • Highest current capability
  • Lowest switching & conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized Qg tot, smaller drivers output

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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