IPI50N10S3L-16

100 V, N-Ch, 15.4 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T
Data Sheet

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IPI50N10S3L-16
IPI50N10S3L-16
Data Sheet

Product details

  • Budgetary Price €/1k
    0.98
  • ID (@25°C) max
    50 A
  • IDpuls max
    200 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    I2PAK (PG-TO262-3)
  • Polarity
    N
  • Ptot max
    100 W
  • QG (typ @10V) max
    64 nC
  • QG (typ @10V)
    49 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    15.4 mΩ
  • RthJC max
    1.5 K/W
  • Technology
    OptiMOS™-T
  • VDS max
    100 V
  • VGS(th) max
    2.4 V
  • VGS(th)
    1.7 V
  • VGS(th) min
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • N-Channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • 100% Avalanche tested
  • PPAP Capable Device

Benefits

  • Highest current capability 180A
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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