not for new design
RoHS Compliant

IPG20N04S4-12A

40 V, Dual N-Ch, 12.2 mΩ max, Automotive MOSFET, dual SSO8 (5x6), OptiMOS™-T2
ea.
in stock

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IPG20N04S4-12A
IPG20N04S4-12A
ea.

Product details

  • Budgetary Price €/1k
    0.35
  • ID (@25°C) max
    20 A
  • IDpuls max
    80 A
  • Launch year
    2012
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    dual SS08 (PG-TDSON-8)
  • Currently planned availability until at least
    2030
  • Polarity
    N+N
  • Ptot max
    41 W
  • QG (typ @10V) max
    18 nC
  • QG (typ @10V)
    14 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    12.2 mΩ
  • RthJC max
    3.7 K/W
  • Technology
    OptiMOS™-T2
  • VDS max
    40 V
  • VGS(th)
    2 V to 4 V
OPN
IPG20N04S412AATMA1
Product Status not for new design
Infineon Package
Package Name Dual SSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name Dual SSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock

Features

  • Dual N-ch-Normal Level-Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device
  • Automotive optical inspection viable
  • Dual Super S08 substitutes DPAKs

Benefits

  • Significant PCB area savings
  • System level cost reduction
  • Bond wire is 200um for up to 20A current
  • Larger source lead for wire bonding
  • Package: PG-TDSON-8-4
  • Equal performance to DPAK, same die size
  • Exposed pad for thermal transfer
  • 2 N-Channel MOSFETs; Isolated Leadframes

Documents

Design resources

Developer community

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