Active and preferred
RoHS Compliant

IPF031N13NM6

OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin
Data Sheet
package
ea.
in stock

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IPF031N13NM6
IPF031N13NM6
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    2.25
  • ID (@25°C) max
    207 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK 7pin (TO-263 7pin)
  • Polarity
    N
  • QG (typ @10V)
    104 nC
  • RDS (on) (@10V) max
    3.1 mΩ
  • VDS max
    135 V
  • VGS(th)
    3 V
Recommended
OPN
IPF031N13NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-7
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-7
Package Name D2PAK 7-pin
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.

Features

  • Up to 53% lower ON-state-resistance
  • Up to 38% lower gate threshold voltage spread
  • Up to 70% reduction of reverse recovery charge (Qrr)
  • Up to 45% lower peak reverse recovery current
    (-Irrm)

Benefits

  • System cost reduction
  • Lower conduction losses and increased output power
  • Lower EMI
  • Less paralleling required
  • Higher power density designs

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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