Active
RoHS Compliant
Lead-free

IPDQ60R020CFD7

Infineon’s answer to resonant high power topologies
Data Sheet
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IPDQ60R020CFD7
IPDQ60R020CFD7
Data Sheet

Product details

  • Budgetary Price €/1k
    7.98
  • ID max
    112 A
  • ID (@25°C) max
    112 A
  • IDpuls max
    360 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Q-DPAK
  • Polarity
    N
  • Ptot max
    543 W
  • QG (typ @10V)
    186 nC
  • QG
    186 nC
  • RDS (on) (@ Tj = 25°C)
    16 mΩ
  • Special Features
    Fast recovery diode
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPDQ60R020CFD7XTMA1
Product Status active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies
  • Enables high power density
  • Enables better control
  • Enables perfect electrical loops

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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