Active
RoHS Compliant
Lead-free

IPDQ60R017S7

Lowest RDS(on) *A 600 V SJ MOSFET in the novel top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions
Data Sheet
package
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in stock

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IPDQ60R017S7
IPDQ60R017S7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    6.55
  • IDpuls max
    491 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Q-DPAK
  • Polarity
    N
  • Ptot max
    500 W
  • QG
    196 nC
  • QG (typ @10V)
    196 nC
  • RDS (on) (@ Tj = 25°C)
    15 mΩ
  • Special Features
    Slow switching
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPDQ60R017S7XTMA1
Product Status active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies.

Features

  • Low RDS(on)
  • Compact top-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin-source for high current switching

Benefits

  • Minimal conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Eliminates or reduces heat sinks
  • Lower TCO or BOM Cost

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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