Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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IPD70R1K4CE
END OF LIFE
discontinued
RoHS Compliant

IPD70R1K4CE

END OF LIFE
Best price-performance superjunction MOSFET for consumer and lighting applications

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Product details

  • Budgetary Price €/1k
    0.2
  • ID (@25°C) max
    5.4 A
  • ID max
    5.4 A
  • IDpuls max
    8.3 A
  • Mounting
    SMT
  • Operating Temperature range
    -40 °C to 150 °C
  • Package
    DPAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    53 W
  • Qgd
    5.8 nC
  • QG
    10.5 nC
  • QG (typ @10V)
    10.5 nC
  • RDS (on) max
    1400 mΩ
  • RDS (on) (@10V) max
    1400 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    2.37 K/W
  • Rth
    2.37 K/W
  • Special Features
    price/performance
  • Tj range
    -40 °C to 150 °C
  • VDS max
    700 V
  • VGS(th) range
    2.5 V to 3.5 V
OPN
IPD70R1K4CEAUMA1
Product Status discontinued
Infineon Package
Package Name DPAK
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name DPAK
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CoolMOS™ CE is a technology platform of Infineon´s market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD , LED TV and LED lighting applications.

Features

  • Thermal behavior
  • ≤ 90°C on device, open case
  • ≤ 50°C/70°C close case temperature
  • EMI within EN55022B standard
  • Ease of use and fast design-in

Benefits

  • Low conduction losses from large margin between R DS(on) typical to nominal
  • Low switching losses from optimized output capacitance (E oss)
  • Optimized EMI to balance switching speed and EMI behavior
  • Good controllability given the integrated R g

Applications

Documents

Design resources

Developer community

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