Active and preferred
RoHS Compliant
Lead-free

IPD60R600CM8

IPD60R600CM8 600 V CoolMOS™ 8 power transistor
Data Sheet
ea.
in stock

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IPD60R600CM8
IPD60R600CM8
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.28
  • ID (@25°C) max
    5 A
  • IDpuls max
    14 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    DPAK
  • Polarity
    N
  • QG
    6 nC
  • QG (typ @10V)
    6 nC
  • RDS (on) (@10V) max
    600 mΩ
  • RDS (on) max
    600 mΩ
  • VDS max
    600 V
  • VGS(th)
    4.2 V
Recommended
OPN
IPD60R600CM8XTMA1
Product Status active and preferred
Infineon Package PG-TO252-3
Package Name N/A
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package PG-TO252-3
Package Name -
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Features

  • Best-in-class RDS(on)*A
  • Significant reduction of losses
  • Excellent commutation ruggedness
  • Integrated fast body diode
  • .XT interconnection
  • ESD protection

Benefits

  • Increased power density
  • Ease of use and fast design-in
  • Low ringing tendency
  • Simplified thermal management
  • Simplified portfolio

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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