Active and preferred
RoHS Compliant

IPD052N10NF2S

StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK
Data Sheet
package
ea.
in stock

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IPD052N10NF2S
IPD052N10NF2S
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.66
  • ID (@25°C) max
    118 A
  • ID max
    118 A
  • IDpuls max
    472 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    DPAK (TO-252)
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    150 W
  • QG (typ @10V)
    51 nC
  • RDS (on) max
    5.2 mΩ
  • RDS (on) (@10V) max
    5.2 mΩ
  • VDS max
    100 V
  • VGS(th)
    3 V
Recommended
OPN
IPD052N10NF2SATMA1
Product Status active and preferred
Infineon Package
PG-TO252-3
Package Name DPAK
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO252-3
Package Name DPAK
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

Features

  • Availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high & low switching frequency
  • Industry standard footprint package
  • High current rating
  • Capable of wave-soldering

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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