Active and preferred
RoHS Compliant

IPD042P03L3 G

P-channel enhancement mode Field-Effect Transistor (FET), -30 V, D-PAK
ea.
in stock

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IPD042P03L3 G
IPD042P03L3 G
ea.

Product details

  • Budgetary Price €/1k
    0.62
  • Ciss
    9290 pF
  • Coss
    3570 pF
  • ID (@25°C) max
    -70 A
  • IDpuls max
    -280 A
  • Operating Temperature max
    175 °C
  • Operating Temperature min
    -55 °C
  • Package
    DPAK (TO-252)
  • Polarity
    P
  • Ptot max
    150 W
  • QG (typ @10V)
    131 nC
  • RDS (on) (@10V) max
    4.2 mΩ
  • Rth
    1 K/W
  • VDS max
    -30 V
  • VGS(th)
    -2 V to -1 V
OPN
IPD042P03L3GATMA1
Product Status active and preferred
Infineon Package
Package Name DPAK
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name DPAK
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • dv/dt rated
Pb-free lead-plating
  • RoHS compliant, Halogen-free
  • Qualified according to AEC Q101
  • Documents

    Design resources

    Developer community

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