Active and preferred
RoHS Compliant
Lead-free

IPC331N15NM5R

OptiMOS™ n-channel power MOSFET 150V - Bare Die
Data Sheet

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IPC331N15NM5R
IPC331N15NM5R
Data Sheet

Product details

  • Die Size (X)
    7.05 mm
  • Die Size (Y)
    4.7 mm
  • Die Size (Area)
    33.13 mm²
  • EAS/Avalanche Energy
    70 mJ
  • Mode
    Enhancement
  • Polarity
    N
  • RDS (on)
    2.9 mΩ
  • Technology
    OptiMOS™ 5
  • Thickness
    246
  • VDS
    150 V
  • VDS max
    150 V
  • VGS(th)
    3 V to 4.6 V
Recommended
OPN
IPC331N15NM5RX7SA1
Product Status active and preferred
Infineon Package --
Package Name Die Form
Packing Size 1
Packing Type HORIZONTAL FRAME SHIPPER
Moisture Level N/A
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package --
Package Name Die Form
Packing Size 1
Packing Type HORIZONTAL FRAME SHIPPER
Moisture Level -
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s OptiMOS™ 5 power MOSFET 150V technology offers a breakthrough reduction in RDS(on) (up to 25% compared to the next best alternative in SuperSO8) and Qrr without compromising FOMgd and FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse-recovery charge (lowest Qrr in SuperSO8 = 26nC) increases commutation ruggedness.

Features

  • Monolithically integrated gate resistor
  • Optimized for applications in modules
  • Ultra-low recovery charge Qrr
  • Ultralow output capacitance Coss
  • RDS(on) reduction vs previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Lower voltage overshoot
  • Gate connection for paralleling MOSFETs

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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