not for new design
RoHS Compliant

IPB65R110CFD7

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
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in stock

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IPB65R110CFD7
IPB65R110CFD7
ea.

Product details

  • Budgetary Price €/1k
    1.58
  • ID max
    22 A
  • ID (@25°C) max
    22 A
  • IDpuls max
    82 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    D2PAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    114 W
  • QG
    41 nC
  • QG (typ @10V)
    41 nC
  • RDS (on) max
    110 mΩ
  • RDS (on) (@10V) max
    110 mΩ
  • VDS max
    650 V
  • VGS(th)
    4 V
OPN
IPB65R110CFD7ATMA1
Product Status not for new design
Infineon Package
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R110CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition.  As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies

Documents

Design resources

Developer community

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