IPB60R120C7

IPB60R120C7

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies
Datasheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IPB60R120C7
IPB60R120C7
Datasheet


Product details

  • ID max
    19 A
  • ID (@25°C) max
    19 A
  • IDpuls max
    66 A
  • Mounting
    SMT
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    D2PAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    92 W
  • Qgd
    11 nC
  • QG
    34 nC
  • QG (typ @10V)
    34 nC
  • RDS (on) (@10V) max
    120 mΩ
  • RDS (on) max
    120 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.357 K/W
  • Rth
    1.357 K/W
  • Special Features
    highest performance
  • VDS max
    600 V
  • VGS(th) range
    3 V to 4 V
  • VGS(th)
    3.5 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon’s 600 V and 650 V CoolMOS™ C7 superjunction (SJ) MOSFET families are designed to achieve record-level efficiency performance, with reduced losses over the whole load range in hard-switching applications.

Features

  • Reduced switching loss parameters such as Q G, C oss, E oss
  • Best-in-class figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the world
  • Rugged body diode

Benefits

  • Enables increasing switching frequency without loss in efficiency
  • Measure showing key parameter for light load and full load efficiency
  • Doubling the switching frequency will half the size of magnetic components
  • Smaller packages for same R DS(on)
  • Can be used in many more positions for both hard and soft switching topologies

Applications

Documents

Design resources

Partner solutions

Developer community