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IPB60R105CFD7

600V CoolMOS™ CFD7 SJ MOSFET with integrated fast body diode in D2PAK package is the perfect choice for resonant high power topologies
Data Sheet
package
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IPB60R105CFD7
IPB60R105CFD7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    1.63
  • ID max
    21 A
  • ID (@25°C) max
    21 A
  • IDpuls max
    79 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    D2PAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    106 W
  • QG (typ @10V)
    42 nC
  • QG
    42 nC
  • RDS (on) (@ Tj = 25°C)
    89 mΩ
  • Special Features
    Fast recovery diode
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPB60R105CFD7ATMA1
Product Status active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R105CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS , such as server , telecom and EV charging stations , where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies

Documents

Documents

Design resources

Partner solutions

Developer community

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