Active and preferred
RoHS Compliant

IPB60R099P7

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
Data Sheet
package

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IPB60R099P7
IPB60R099P7
Data Sheet

Product details

  • Budgetary Price €/1k
    1.42
  • Ciss
    1952 pF
  • Coss
    33 pF
  • ID max
    31 A
  • ID (@25°C) max
    31 A
  • IDpuls max
    100 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    D2PAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    117 W
  • Qgd
    14 nC
  • QG (typ @10V)
    45 nC
  • QG
    45 nC
  • RDS (on) (@10V) max
    99 mΩ
  • RDS (on) max
    99 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.07 K/W
  • Rth
    1.07 K/W
  • Special Features
    price/performance
  • VDS max
    600 V
  • VGS(th)
    3.5 V
Recommended
OPN
IPB60R099P7ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • integrated gate resistor
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • better control
  • high efficiency @ hard switching
  • higher power density
  • MOSFET suits hard & resonant topologies

Documents

Documents

Design resources

Partner solutions

Developer community

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