not for new design
RoHS Compliant

IPB110N20N3LF

Combining a low RDS(on) with a wide safe operating area (SOA)
Data Sheet
package
ea.
in stock

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IPB110N20N3LF
IPB110N20N3LF
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    2.95
  • ID (@25°C) max
    88 A
  • IDpuls max
    352 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    D2PAK (TO-263)
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    250 W
  • Qgd
    51 nC
  • QG (typ @10V)
    76 nC
  • RDS (on) (@10V) max
    11 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.5 K/W
  • Rth
    0.3 K/W
  • Special Features
    Wide SOA
  • VDS max
    200 V
  • VGS(th)
    3.2 V
OPN
IPB110N20N3LFATMA1
Product Status not for new design
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Features

  • R DS(on) and wide (SOA)
  • High max. pulse current
  • High continuous pulse current

Benefits

  • Rugged linear mode operation
  • Low conduction losses
  • Faster start-up with higher in-rush

Documents

Documents

Design resources

Partner solutions

Developer community

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