IPB083N15N5LF

IPB083N15N5LF

Combining a low RDS(on) with a wide safe operating area (SOA)
Datasheet

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IPB083N15N5LF
IPB083N15N5LF
Datasheet


Product details

  • Budgetary Price €/1k
    2.52
  • ID (@25°C) max
    105 A
  • IDpuls max
    420 A
  • Mounting
    SMD
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    D2PAK (TO-263)
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    179 W
  • Qgd
    31 nC
  • QG (typ @10V)
    45 nC
  • RDS (on) (@10V) max
    8.3 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.7 K/W
  • Rth
    0.45 K/W
  • Special Features
    Wide SOA
  • VDS max
    150 V
  • VGS(th) range
    3.3 V to 4.9 V
  • VGS(th)
    4.1 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Features

  • R DS(on) and wide (SOA)
  • High max. pulse current
  • High continuous pulse current

Benefits

  • Rugged linear mode operation
  • Low conduction losses
  • Faster start-up with higher in-rush

Applications

Documents

Design resources

Partner solutions

Developer community