IPA60R360CFD7

Infineon’s answer to resonant high power topologies
Data Sheet

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IPA60R360CFD7
IPA60R360CFD7
Data Sheet

Product details

  • ID max
    5 A
  • ID (@25°C) max
    5 A
  • IDpuls max
    24 A
  • Mounting
    THT
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    TO220 FullPAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    23 W
  • QG (typ @10V)
    14 nC
  • QG
    14 nC
  • RDS (on) max
    360 mΩ
  • RDS (on) (@10V) max
    360 mΩ
  • VDS max
    600 V
  • VGS(th) range
    3.5 V to 4.5 V
  • VGS(th)
    4 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The 600 V CoolMOS™ CFD7 SJ MOSFET is Infineon’s high voltage superjunction MOSFET technology with an integrated fast body diode, completing the CoolMOS™ 7 series. The CFD7 is the successor to the CoolMOS™ CFD2 SJ MOSFET family and comes with a reduced gate charge (Qg), improved turn-off behavior, and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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