IPA040N08NM5S

IPA040N08NM5S

OptiMOS™ 5 power MOSFET 80V in TO-220 FullPAK package (IPA040N08NM5S)
Datasheet

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IPA040N08NM5S
IPA040N08NM5S
Datasheet


Product details

  • Budgetary Price €/1k
    1.28
  • ID (@ TC=25°C) max
    75 A
  • ID (@25°C) max
    75 A
  • IDpuls max
    300 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    TO-220 FullPAK
  • Polarity
    N
  • Ptot max
    39 W
  • QG (typ @10V)
    70 nC
  • RDS (on) (@10V) max
    4 mΩ
  • VDS max
    80 V
  • VGS(th) range
    2.2 V to 3.8 V
  • VGS(th)
    3 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon’s OptiMOS™ 5 power MOSFET 80V (IPA040N08NM5S) is meeting the requirements for improved system efficiency while reducing system costs. It has low on-state resistance RDS(on) of 4.0mOhm and low voltage overshoot. The new TO-220 FullPAK package portfolio extension is optimized for TV, desktop, adapter and gaming applications. OptiMOS™ power MOSFETs feature increased power density as well as improved efficiency and are therefore the perfect solution for synchronous rectification.

Features

  • Low voltage overshoot
  • Low on-state resistance (RDS(on))
  • No need for electrical isolation material which is normally used in TO-220 packages

Benefits

  • Less paralleling required
  • Generated heat is not diverted to the printed circuit board
  • Less heat generation
  • Fits TO-220 footprint

Applications

Documents

Design resources

Partner solutions

Developer community